Longi said it has achieved a 26.56% efficiency rating for a gallium-doped, p-type heterojunction (HJT) solar cell and a 26.09% efficiency rating for an indium-free HJT cell, both based on M6 wafers. Germany’s Institute for Solar Energy Research in Hamelin (ISFH) has confirmed the results.
Longi has revealed that it has achieved power conversion efficiencies in mass production of 26.56% for a gallium-doped p-type HJT solar cell and 26.09% for an indium-free HJT cell, both based on M6 full-size monocrystalline silicon wafers. The results have been confirmed by ISFH.
“Addressing the long-term pain point of HJT cells, Longi’s R&D team focused on market demand and technological innovation to achieve the new conversion efficiency for its commercial gallium-doped silicon wafer, 0.44% higher than the 26.12% announced in September this year,” the company said in a statement.
For the indium-free HJT cells, the team replaced traditional indium-based transparent conductive film with alternative materials. It claims the different materials are cheaper and more environmentally friendly.
“The development also offers a potential solution to the industry’s dependence on indium for large-scale mass production, signaling a way forward for HJT to move towards terawatt scale production levels,” said Longi.
In November, Longi claimed a record-breaking 26.81% efficiency rating for an unspecified HJT solar cell. In addition, the Chinese manufacturer recorded an efficiency of 26.5% for a n-type heterojunction solar cell in June and a 25.19% rating for a p-type TOPCon solar cell in July 2021. In June 2021, it reported a 25.21% efficiency rating for an n-type TOPCon PV cell.
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